SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at
wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

Infrared (IR) multispectral detection is attracting increasing interest with the rising demand
for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here …

The development of cost-effective and highly sensitive short-wave infrared (SWIR)
photodetectors is crucial for the expanding applications of SWIR imaging in civilian …

Entering the era of the Internet of Things (IoT) and fifth-generation (5G) mobile networks, the
demand for compact, cost-effective, and high-performance sensors and actuators is …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

GeSn alloys hold promise for silicon-compatible integrated applications in electronics,
photonics, and topological quantum devices. However, understanding their intricate …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …