Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional
semiconductors such as silicon, rendering them very promising to be applied in the fields of …

Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …

The degraded performance of 4H-SiC transistors due to a high density of the SiC/SiO 2
interface states (D IT)(~ 10 12-10 13 eV-1 cm-2) has gained increasing attention in recent …

High speed and high-temperature operation capabilities are desirable features of integrated
circuits. Due to their innate electrical and physical properties, silicon devices face significant …

4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to
silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H …

High performance and stable operation are desired features of today's integrated circuits
(ICs). Due to its inherent properties, devices based on silicon carbide (SiC) exhibit excellent …

Memory forms a major part of any integrated circuit (IC) and is considered a key component
of an electronic system. Though various ICs using silicon carbide (SiC) have been designed …

Various digital and analog integrated circuits (ICs) have been recently designed and
demonstrated using silicon carbide (SiC) bipolar transistors [1, 2]. However, a key …

Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh
environment applications due to its superior inherent electrical properties. Though current …

4H-silicon carbide (SiC) is a suitable candidate for high-temperature and radiation prone
applications, due to its superior electrical and material properties. Several researchers have …