This article focuses on failure modes and lifetime testing of IGBT modules being one of the
most vulnerable components in power electronic converters. IGBT modules have already …

Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

This article aims to provide an update of the reliability aspects of research on power
electronic components and hardware systems. It introduces the latest advances in the …

Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …

The investigation shows that power semiconductor devices are the most fragile components
of power electronic systems. Improving the reliability of power devices is the basis of a …

The increasing demand for higher power device utilization and reliability in power electronic
systems is driving the integration of condition monitoring and active control in power …

Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar
transistor (IGBT) modules during long-time operation. In the present work, the failure …

This paper proposes a methodology for active thermal control of power electronic modules
in ac applications, which includes a loss manipulation unit, a thermal observer structure, and …

In silicon carbide (SiC) power MOSFETs, threshold voltage instability under high-
temperature conditions has potential reliability threats to long-term operation. In this paper …