LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond

S Chen, Y Ning, CS Tang, L Dai, S Zeng… - Advanced Electronic …, 2024‏ - Wiley Online Library
This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …

Nanoscale phenomena in oxide heterostructures

JA Sulpizio, S Ilani, P Irvin, J Levy - Annual Review of Materials …, 2014‏ - annualreviews.org
Recent advances in creating complex oxide heterostructures, interfaces formed between two
different transition-metal oxides, have heralded a new era of materials and physics research …

Correlated metals as transparent conductors

L Zhang, Y Zhou, L Guo, W Zhao, A Barnes… - Nature materials, 2016‏ - nature.com
The fundamental challenge for designing transparent conductors used in photovoltaics,
displays and solid-state lighting is the ideal combination of high optical transparency and …

The 2016 oxide electronic materials and oxide interfaces roadmap

M Lorenz, MSR Rao, T Venkatesan… - Journal of Physics D …, 2016‏ - iopscience.iop.org
Oxide electronic materials provide a plethora of possible applications and offer ample
opportunity for scientists to probe into some of the exciting and intriguing phenomena …

Feld-induced modulation of two-dimensional electron gas at LaAlO3/SrTiO3 interface by polar distortion of LaAlO3

J Seo, H Lee, K Eom, J Byun, T Min, J Lee… - Nature …, 2024‏ - nature.com
Since the discovery of two-dimensional electron gas at the LaAlO3/SrTiO3 interface, its
intriguing physical properties have garnered significant interests for device applications. Yet …

High Electron mobility thin‐film transistors based on solution‐processed semiconducting metal oxide heterojunctions and quasi‐superlattices

YH Lin, H Faber, JG Labram, E Stratakis… - Advanced …, 2015‏ - Wiley Online Library
High mobility thin‐film transistor technologies that can be implemented using simple and
inexpensive fabrication methods are in great demand because of their applicability in a wide …

Wafer-scale growth of VO2 thin films using a combinatorial approach

HT Zhang, L Zhang, D Mukherjee, YX Zheng… - Nature …, 2015‏ - nature.com
Transition metal oxides offer functional properties beyond conventional semiconductors.
Bridging the gap between the fundamental research frontier in oxide electronics and their …

Epitaxial oxides on semiconductors: from fundamentals to new devices

DP Kumah, JH Ngai, L Kornblum - Advanced Functional …, 2020‏ - Wiley Online Library
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …

[HTML][HTML] All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

U Kim, C Park, T Ha, YM Kim, N Kim, C Ju, J Park, J Yu… - APL materials, 2015‏ - pubs.aip.org
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of
two lattice-matched perovskite oxides: BaSnO 3 and LaInO 3. We have developed epitaxial …

[HTML][HTML] Scavenging of oxygen from SrTiO3 during oxide thin film deposition and the formation of interfacial 2DEGs

AB Posadas, KJ Kormondy, W Guo, P Ponath… - Journal of Applied …, 2017‏ - pubs.aip.org
SrTiO 3 is a widely used substrate for the growth of other functional oxide thin films. The
reactivity of the substrate with respect to the film during deposition, particularly with regard to …