The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

In this review, we examine the contributions of surface science research to the
understanding of metal-semiconductor interfaces. In particular, we survey conventional …

The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and
Applications, Second Edition explores the technology behind the spectacular growth in the …

Abstract Single‐crystal InAs nanowires (NWs) are synthesized using metal–organic
chemical vapor deposition (MOCVD) and fabricated into NW field‐effect transistors …

In this paper, we review the metal–GaN contact technology to shed light on some of the
critical issues such as GaN surface cleaning for metallization, Schottky barrier formation to …

A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented
along with critical issues pertaining to each semiconductor material. Au-based alloys (eg …

The electronic structures of clean InAs (100) surfaces have been investigated by in situ high-
resolution electron-energy-loss spectroscopy. Intrinsic electron accumulation layers with …

The development of electronics that can operate at high temperatures has been identified as
a critical technology for the next century. Increasingly, engineers will be called upon to …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

Interface properties of Ga2O3–GaAs structures fabricated using in situ multiple‐chamber
molecular beam epitaxy have been investigated. The oxide films were deposited on clean …