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High quality ZnO and Ga: ZnO thin films grown onto crystalline Si (1 0 0) by RF magnetron sputtering
M Gabás, P Díaz-Carrasco, F Agulló-Rueda… - Solar energy materials …, 2011 - Elsevier
Abstract Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron
sputtering onto single crystal Si (1 0 0) substrates equivalent to the commercial Si solar cells …
sputtering onto single crystal Si (1 0 0) substrates equivalent to the commercial Si solar cells …
Activating two-dimensional semiconductors for photocatalysis: a cross-dimensional strategy
The emerging two-dimensional (2D) semiconductors substantially extend materials bases
for versatile applications such as semiconductor photocatalysis demanding semiconductive …
for versatile applications such as semiconductor photocatalysis demanding semiconductive …
Tribocorrosion response in biological environments of multilayer TaN films deposited by HPPMS
L Mendizabal, A Lopez, R Bayón… - Surface and Coatings …, 2016 - Elsevier
Biomedical implant failure arises mainly from the degradation caused by tribological
processes occurring in the corrosive environment the human body represents, known as …
processes occurring in the corrosive environment the human body represents, known as …
TEM specimen preparation of semiconductor–PMMA–metal interfaces
Transmission electron microscopy (TEM) cross-section specimens of PMMA in contact with
gold and Si were prepared by focused ion beam (FIB) and compared with plan-view PMMA …
gold and Si were prepared by focused ion beam (FIB) and compared with plan-view PMMA …
Two‐In‐one sample preparation for plan‐VIew TEM
G Sáfrán, N Szász, E Sáfrán - Microscopy Research and …, 2015 - Wiley Online Library
Transmission electron microscopy (TEM) sample preparation requires special skills, it is time
consuming and costly, hence, an increase of the efficiency is of primary importance. This …
consuming and costly, hence, an increase of the efficiency is of primary importance. This …
Characterization of the interface between highly conductive Ga: ZnO films and the silicon substrate
M Gabás, E Ochoa-Martínez, E Navarrete-Astorga… - Applied Surface …, 2017 - Elsevier
Gallium-doped zinc oxide films are an interesting alternative for transparent conductive
materials. To improve their performance, the interface between the grown layer and the …
materials. To improve their performance, the interface between the grown layer and the …
Electrical properties of nanometric CGO-thin films prepared by electron-beam physical vapour deposition
Thin-film oxide-ion-conducting electrolytes are of considerable interest for the development
of micro-solid oxide fuel cells (μ-SOFCs). In this study, nanocrystalline CGO thin films (with …
of micro-solid oxide fuel cells (μ-SOFCs). In this study, nanocrystalline CGO thin films (with …
TiNxOy/TiN dielectric contrasts obtained by ion implantation of; structural, optical and electrical properties
The properties of TiN can be gradually transformed by implantations in the 10–40 keV range
and fluences in the 5× 10 13–5× 10 16 cm− 2 range. The resulting structure consists of …
and fluences in the 5× 10 13–5× 10 16 cm− 2 range. The resulting structure consists of …
In-depth multi-technique characterization of chromium–silicon mixed oxides produced by reactive ion beam mixing of the Cr/Si interface
RE Galindo, N Benito, D Duday, GG Fuentes… - Journal of Analytical …, 2012 - pubs.rsc.org
The great interest of mixed metal–silicon oxides lies in their suitability, among other
applications, as optical coatings with an adjustable refractive index. In this paper we …
applications, as optical coatings with an adjustable refractive index. In this paper we …
Interface between cement paste and thin TiN film for corrosion resistance enhancement; structural, morphological and electrochemical properties
TiN thin films prepared by magnetron sputtering have been evaluated as corrosion
protective coatings for potential applications in concrete reinforcing steel. The interface …
protective coatings for potential applications in concrete reinforcing steel. The interface …