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A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing …
This paper proposes a compact analytical model and comprehensively investigates the
biosensing performance of a novel dielectric modulated triple surrounding gate germanium …
biosensing performance of a novel dielectric modulated triple surrounding gate germanium …
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
Simulation of high breakdown voltage, improved current collapse suppression, and enhanced frequency response AlGaN/GaN HEMT Using a double floating field …
In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field
plate structure (basic), a conventional gate field plate structure (GFP), and a double floating …
plate structure (basic), a conventional gate field plate structure (GFP), and a double floating …
Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …
A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications
P Murugapandiyan, SRK Kalva, V Rajyalakshmi… - Micro and …, 2023 - Elsevier
In this work, we report comparative analysis of stable transconductance and high gain
linearity for AlGaN and InAlN barrier-based HEMTs using an InGaN/GaN coupling channel …
linearity for AlGaN and InAlN barrier-based HEMTs using an InGaN/GaN coupling channel …
Improvement of AlGaN/GaN HEMTs linearity using etched-fin gate structure for Ka band applications
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate
structures fabricated to improve device linearity for Ka-band application are reported. Within …
structures fabricated to improve device linearity for Ka-band application are reported. Within …
Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates
In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO
substrate is proposed and optimization is done for channel length, gate length and gate …
substrate is proposed and optimization is done for channel length, gate length and gate …
Investigation on LG = 50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with afT/fmax of 264/312 GHz for beyond 5G (B5G) Applications
The impact of mini-field plated tapered T-Gate and conventional gate on LG= 50 nm
AlGaN/GaN on-Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF …
AlGaN/GaN on-Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF …
On the Baliga's figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …