In this work, we present a detailed study on the effects of energetic ions and gamma
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …

Spin–orbit torque magnetic tunnel junction (SOT-MTJ) is the memory cell of magnetic
random access memory (MRAM), which is a promising candidate for upper level cache in …

The reliability of silicon bipolar junction transistors (Si BJTs) and silicon germanium
heterojunction bipolar transistors (SiGe HBTs) were studied under 80 MeV nitrogen (N 6+) …

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized
using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical …

N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were
irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic …

The silicon bipolar junction transistor (Si BJT) is widely used as a discrete device, but it is
susceptible to damage from both ionization and displacement in nuclear radiation …

At present, to evaluate the service life of space optical materials on the ground, 60Co γ-rays
are usually used. However, the irradiation effect of the main space particles (protons …

The study of radiation response and reliability of high-k dielectric materials plays a
prominent role in Complementary Metal Oxide Semiconductor (CMOS) technology for …

The nano-engineered silicon–germanium heterojunction bipolar transistors (SiGe HBTs)
were irradiated with 100 MeV phosphorous ions up to a high total dose of 100 Mrad. The …

Bias-emission voltage and dose-dependent current gain is a key parameter in detecting the
physical properties of the bipolar transistor. The first objective of this work is to measure the …