Mixed-dimensional van der Waals heterostructures
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide
efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given …
efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given …
Vertical transistors based on 2D materials: Status and prospects
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
Quantum effect-based flexible and transparent pressure sensors with ultrahigh sensitivity and sensing density
L Shi, Z Li, M Chen, Y Qin, Y Jiang, L Wu - Nature communications, 2020 - nature.com
Although high-performance flexible pressure sensors have been extensively investigated in
recent years owing to their diverse applications in biomedical and information technologies …
recent years owing to their diverse applications in biomedical and information technologies …
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress
This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …
[HTML][HTML] A generalized self-consistent model for quantum tunneling current in dissimilar metal-insulator-metal junction
We study the current density-voltage (J− V) characteristics of dissimilar metal-insulator-metal
(MIM) nanoscale tunneling junctions using a self-consistent quantum model. The model …
(MIM) nanoscale tunneling junctions using a self-consistent quantum model. The model …
[책][B] 2D materials for nanoelectronics
This book is the first to present comprehensive, state-of-the-art coverage of 2D materials and
their nanoelectronic applications. Comprised of chapters authored by world-renowned …
their nanoelectronic applications. Comprised of chapters authored by world-renowned …
Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter
Single layer graphene is an ideal material for the base layer of hot electron transistors
(HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long …
(HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long …
Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors
Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …
improvement is achieved in the switching speed. However, the rising leakage current …
GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors
C Zou, Z Zhao, M Xu, X Wang, Q Liu, K Chen, L He… - ACS …, 2023 - ACS Publications
To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron
transistor (HET) has been proposed. This device has the advantage of high working speed …
transistor (HET) has been proposed. This device has the advantage of high working speed …
A vertical silicon-graphene-germanium transistor
Graphene-base transistors have been proposed for high-frequency applications because of
the negligible base transit time induced by the atomic thickness of graphene. However …
the negligible base transit time induced by the atomic thickness of graphene. However …