Mixed-dimensional van der Waals heterostructures

D Jariwala, TJ Marks, MC Hersam - Nature materials, 2017 - nature.com
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide
efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given …

Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Quantum effect-based flexible and transparent pressure sensors with ultrahigh sensitivity and sensing density

L Shi, Z Li, M Chen, Y Qin, Y Jiang, L Wu - Nature communications, 2020 - nature.com
Although high-performance flexible pressure sensors have been extensively investigated in
recent years owing to their diverse applications in biomedical and information technologies …

WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress

A Grillo, M Passacantando, A Zak, A Pelella… - Small, 2020 - Wiley Online Library
This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …

[HTML][HTML] A generalized self-consistent model for quantum tunneling current in dissimilar metal-insulator-metal junction

S Banerjee, P Zhang - AIP Advances, 2019 - pubs.aip.org
We study the current density-voltage (J− V) characteristics of dissimilar metal-insulator-metal
(MIM) nanoscale tunneling junctions using a self-consistent quantum model. The model …

[책][B] 2D materials for nanoelectronics

M Houssa, A Dimoulas, A Molle - 2016 - books.google.com
This book is the first to present comprehensive, state-of-the-art coverage of 2D materials and
their nanoelectronic applications. Comprised of chapters authored by world-renowned …

Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter

A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song… - Nano …, 2017 - ACS Publications
Single layer graphene is an ideal material for the base layer of hot electron transistors
(HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long …

Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors

Y Lv, W Qin, C Wang, L Liao… - Advanced Electronic …, 2019 - Wiley Online Library
Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …

GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors

C Zou, Z Zhao, M Xu, X Wang, Q Liu, K Chen, L He… - ACS …, 2023 - ACS Publications
To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron
transistor (HET) has been proposed. This device has the advantage of high working speed …

A vertical silicon-graphene-germanium transistor

C Liu, W Ma, M Chen, W Ren, D Sun - Nature communications, 2019 - nature.com
Graphene-base transistors have been proposed for high-frequency applications because of
the negligible base transit time induced by the atomic thickness of graphene. However …