In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …

We report a novel approach in fabricating high-performance enhancement mode (E-mode)
AlGaN/GaN HEMTs. The fabrication technique is based on fluoride-based plasma treatment …

The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …

This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN
high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

This work reports recent progress in the sub-6 GHz power performance of GaN-based
HEMTs grown on high resistivity silicon substrates with passivation implanted termination …

This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …

Standard-setting, groundbreaking, authoritative, comprehensive—these often overused
words perfectly describe The Circuits and Filters Handbook, Third Edition. This standard …