Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

Threshold switches with Ag or Cu active metal species are volatile memristors (also termed
diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal …

An efficient way to reduce the power consumption of electronic devices is to lower the supply
voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 …

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply
voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in …

It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …

Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …

The success of silicon as a dominant semiconductor technology has been enabled by its
moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current …

Efforts to achieve the long-standing dream of realizing scalable learning algorithms for
networks of spiking neurons in silicon have been hampered by (a) the limited scalability of …

Power dissipation is a fundamental issue for future chip-based electronics. As promising
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …

In November 1971, Intel introduced the world's first single-chip microprocessor, the Intel
4004. It had 2,300 transistors, ran at a clock speed of up to 740 KHz, and delivered 60,000 …