Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …

A high-performance and broadband heterojunction photodetector has been successfully
fabricated. The heterostructure device is based on a uniform and pinhole-free perovskite film …

In this article, we demonstrated novel methods to improve the performance of pin
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a …

In this work, we propose Silicon based broad-band near infrared Schottky barrier
photodetectors. The devices operate beyond 1200 nm wavelength and exhibit …

Interconnect delays, bandwidth and power consumption are increasingly dominating IC
performance due to increases in chip size and reduction in the minimum feature size, in …

The germanium-on-insulator (GOI) has recently emerged as a new platform for
complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated circuits …

In this paper, germanium metal-semiconductor-metal photodetectors (MSM PDs) are
fabricated on Si using a low-temperature two-step deposition technique by RF-PECVD. The …

We demonstrate normal incidence pin photodiodes on selective-area-grown Ge using
multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An …

This chapter covers recent advances in SiGe based detector technology, including device
operation, fabrication processes, and various optoelectronic applications. Optical sensing …

Silicon (Si)-based photodetectors are appealing candidates due to their low cost and
compatibility with the complementary metal oxide semiconductor (CMOS) technology. The …