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Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance
Total ionizing dose results are provided, showing the effects of different threshold adjust
implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation …
implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation …
[کتاب][B] Radiation effects in semiconductors
K Iniewski - 2018 - taylorfrancis.com
Space applications, nuclear physics, military operations, medical imaging, and especially
electronics (modern silicon processing) are obvious fields in which radiation damage can …
electronics (modern silicon processing) are obvious fields in which radiation damage can …
Total ionizing dose effects on the power-up state of static random-access memory
Power-up states of static random-access memory (SRAM) memories are often used for
generating physical unclonable functions (PUFs) in a variety of integrated circuits. The …
generating physical unclonable functions (PUFs) in a variety of integrated circuits. The …
Impact of X-ray tomography on the reliability of integrated circuits
X-ray tomography provides 3-D information of an integrated circuit (IC) and has been utilized
for counterfeit detection. Although it is a nondestructive process, electrical functionalities of …
for counterfeit detection. Although it is a nondestructive process, electrical functionalities of …
Impact of high TID irradiation on stability of 65 nm SRAM cells
J Cui, Q Zheng, Y Li, Q Guo - IEEE Transactions on Nuclear …, 2022 - ieeexplore.ieee.org
Impact of high total ionizing dose (TID) irradiation on stability of 65 nm static random-access
memory (SRAM) cells is investigated in this article. The stability of 65 nm SRAM cells is …
memory (SRAM) cells is investigated in this article. The stability of 65 nm SRAM cells is …
Evaluation of a COTS 65-nm SRAM under 15 MeV protons and 14 MeV neutrons at low VDD
This article presents an experimental study on the sensitivity of a commercial-off-the-shelf
(COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton …
(COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton …
[HTML][HTML] Total ionizing dose effects on a delay-based physical unclonable function implemented in FPGAs
Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly
being used for authentication and key generation in ICs and FPGAs. For space systems …
being used for authentication and key generation in ICs and FPGAs. For space systems …
Analyzing the Impact of X-ray Tomography on the Reliability of Integrated Circuits
X-ray tomography is a promising technique that can provide micron level, internal structure,
and three dimensional (3D) information of an integrated circuit (IC) component without the …
and three dimensional (3D) information of an integrated circuit (IC) component without the …
[کتاب][B] Modeling of total ionizing dose effects in advanced complementary metal-oxide-semiconductor technologies
IS Esqueda - 2011 - search.proquest.com
The increased use of commercial complementary metal-oxide-semiconductor (CMOS)
technologies in harsh radiation environments has resulted in a new approach to radiation …
technologies in harsh radiation environments has resulted in a new approach to radiation …
Total ionizing dose influence on the single-event upset sensitivity of 130-nm PD SOI SRAMs
Effect of total ionizing dose (TID) on single-event upset (SEU) hardness of 130 nm partially
depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is …
depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is …