Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …

Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …

We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-
channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is …

In this letter, we report for the first time a distinctive approach of implementing a junctionless
transistor (JLT) without do** (do**-less) the ultrathin silicon film. A charge-plasma …

This paper presents a radio-frequency (RF) model and extracted model parameters for
junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors …

In this paper, we present a simulation study of analog circuit performance parameters for a
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …

A bulk current model is formulated for long-channel double-gate junctionless (DGJL)
transistors. Using a depletion approximation, an analytical expression is derived from the …

In this paper, an analytical model has been developed for junctionless silicon on insulator
ion-sensitive FET for pH sensing applications. The pH sensors detect the change of the …

A surface-potential-based model is developed for the symmetric long-channel junctionless
double-gate MOSFET. The relationships between surface potential and gate voltage are …