Isostructural metal-insulator transition in VO2
The metal-insulator transition in correlated materials is usually coupled to a symmetry-
lowering structural phase transition. This coupling not only complicates the understanding of …
lowering structural phase transition. This coupling not only complicates the understanding of …
Picoampere Dark Current and Electro‐Opto‐Coupled Sub‐to‐Super‐linear Response from Mott‐Transition Enabled Infrared Photodetector for Near‐Sensor Vision …
Light‐intensity selective superlinear photodetectors with ultralow dark current can provide
an essential breakthrough for the development of high‐performing near‐sensor vision …
an essential breakthrough for the development of high‐performing near‐sensor vision …
[HTML][HTML] Wafer-scale growth of VO2 thin films using a combinatorial approach
Transition metal oxides offer functional properties beyond conventional semiconductors.
Bridging the gap between the fundamental research frontier in oxide electronics and their …
Bridging the gap between the fundamental research frontier in oxide electronics and their …
Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monocliniclike Metallic Phase of
We report the simultaneous measurement of the structural and electronic components of the
metal-insulator transition (MIT) of VO 2 using electron and photoelectron spectroscopies and …
metal-insulator transition (MIT) of VO 2 using electron and photoelectron spectroscopies and …
Opportunities in vanadium-based strongly correlated electron systems
The diverse and fascinating properties of transition metal oxides stem from the strongly
correlated electronic degrees of freedom; the scientific challenge and range of possible …
correlated electronic degrees of freedom; the scientific challenge and range of possible …
Phase-transition modulated, high-performance dual-mode photodetectors based on WSe2/VO2 heterojunctions
H Luo, B Wang, E Wang, X Wang, Y Sun, Q Li… - Applied Physics …, 2019 - pubs.aip.org
Photodetectors based on two-dimensional (2D) transition metal dichalcogenides (TMDs)
can only be operated in a single photovoltaic or photoconductive mode, showing either high …
can only be operated in a single photovoltaic or photoconductive mode, showing either high …
Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics
The next generation of electronics is likely to incorporate various functional materials,
including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions …
including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions …
[HTML][HTML] Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy
We report the growth of (001)-oriented VO 2 films as thin as 1.5 nm with abrupt and
reproducible metal-insulator transitions (MIT) without a cap** layer. Limitations to the …
reproducible metal-insulator transitions (MIT) without a cap** layer. Limitations to the …
MoS2 Heterojunctions by Thickness Modulation
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by
thickness modulation. Kelvin probe force microscopy is used to map the surface potential at …
thickness modulation. Kelvin probe force microscopy is used to map the surface potential at …
Ultrahigh Responsivity and External Quantum Efficiency of an Ultraviolet-Light Photodetector Based on a Single VO2 Microwire
JM Wu, WE Chang - ACS applied materials & interfaces, 2014 - ACS Publications
We demonstrated a single microwire photodetector first made using a VO2 microwire that
exhibted high responsivity (R λ) and external quantum efficiency (EQE) under varying light …
exhibted high responsivity (R λ) and external quantum efficiency (EQE) under varying light …