[HTML][HTML] Recent progress in the development of graphene detector for terahertz detection

J Liu, X Li, R Jiang, K Yang, J Zhao, SA Khan, J He… - Sensors, 2021 - mdpi.com
Terahertz waves are expected to be used in next-generation communications, detection,
and other fields due to their unique characteristics. As a basic part of the terahertz …

Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

S El-Ahmar, MJ Szary, T Ciuk, R Prokopowicz… - Applied Surface …, 2022 - Elsevier
In this paper, we report on the first experimental study on the impact of neutron radiation on
quasi-free-standing (QFS) graphene. For this purpose, we have fabricated hydrogen …

[HTML][HTML] Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

T Ciuk, R Kozłowski, A Romanowska, A Zagojski… - Carbon Trends, 2023 - Elsevier
High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …

[HTML][HTML] Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6HSiC (0001)

A Dobrowolski, J Jagiełło, K Piętak-Jurczak… - Applied Surface …, 2024 - Elsevier
In this report, we present transfer-free p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on 15-mm× 15-mm semi-insulating …

[HTML][HTML] Quasi-free-standing epitaxial graphene on 4H-SiC (0001) as a two-dimensional reference standard for Kelvin Probe Force Microscopy

T Ciuk, B Pyrzanowska, J Jagiełło, A Dobrowolski… - Applied Surface …, 2024 - Elsevier
Abstract Kelvin Probe Force Microscopy is a method to assess the contact potential
difference between a sample and the probe tip. It remains a relative tool unless a reference …

Origin of the double polarization mechanism in aluminum-oxide-passivated quasi-free-standing epitaxial graphene on 6H-SiC (0001)

K Pietak-Jurczak, J Gaca, A Dobrowolski… - ACS Applied …, 2024 - ACS Publications
In this work, we synthesize a 43 nm thick layer of amorphous Al2O3 on transfer-free p-type
hydrogen-intercalated quasi-free-standing (QFS) epitaxial chemical vapor deposition …

[HTML][HTML] The comparison of InSb-based thin films and graphene on SiC for magnetic diagnostics under extreme conditions

S El-Ahmar, M Przychodnia, J Jankowski… - Sensors, 2022 - mdpi.com
The ability to precisely measure magnetic fields under extreme operating conditions is
becoming increasingly important as a result of the advent of modern diagnostics for future …

Determining the number of graphene layers based on Raman response of the SiC substrate

A Dobrowolski, J Jagiełło, D Czołak, T Ciuk - Physica E: Low-dimensional …, 2021 - Elsevier
In this report we demonstrate a method for direct determination of the number of layers of
hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene …

High-temperature Hall effect sensor based on epitaxial graphene on high-purity semiinsulating 4H-SiC

T Ciuk, B Stanczyk, K Przyborowska… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on
quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) …

Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition

K Piętak, J Jagiełło, A Dobrowolski, R Budzich… - Applied Physics …, 2022 - pubs.aip.org
In this report, we demonstrate a method for the enhancement of Raman active modes of
hydrogen-intercalated quasi-free-standing epitaxial chemical vapor deposition graphene …