Chalcogenide glasses present diverse, fascinating photoinduced behavior when they are
illuminated with photons. One of the thrust photoinduced phenomena in chalcogenide thin …

In this review the investigations of direct surface relief formations in nanomultilayers from
chalcogenide glasses are summarized. Chalcogenide glasses are known to exhibit several …

Arsenic is a common impurity element in sulfide concentrates. It tends to accumulate in the
flue dust of smelting furnace due to the volatility and internal circulation of the flue dust …

Abstract Electron beam (e-beam)-induced changes of surface profile morphology in As c Se
1− c (0.2< c< 0.5) thin films are investigated as a function of the film composition. It is shown …

We deposited electric charge in periodic manner in form of square lattices of points in Ge–As–
Se chalcogenide semiconductor films by electron beam. Various types of surface reliefs are …

Formation of surface reliefs induced by electron beam on surface of Ge-As-Se thin films is
investigated as a function of concentration of elements in the films. It was found that during …

As x S 100-x (x= 40, 45, 50) thin films top surface nanolayers affected by green (532 nm)
diode laser illumination have been studied by high-resolution X-ray photoelectron …

In this paper, we investigate the effect of electron beam irradiation on the dielectric
properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss …

The evolution of the structure of SbxGe40-xSe60 (x= 8, 12, 15, 18 and 20) chalcogenide
glasses is determined by high resolution X-ray photoelectron spectroscopy as Sb is added …

The processes of micro-object hologram real-time recording on a photo-thermo-plastic
carrier based on a chalcogenide glassy semiconductor As–Se–S–Sn system were studied …