This article provides an overview of the present state-of-the-art pertaining to polymer
capacitor dielectrics appropriate for high electrostatic energy density applications. The …

Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

Hexagonal BN (h-BN) is attracting a lot of attention for two-dimensional electronics and as a
host for single-photon emitters. We study the properties of native defects and impurities in h …

Controllable n-type do** over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …

Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …

Acceptor defects and impurities play a critical role in the performance of GaN‐based
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …

While high temperature annealing has been proven to be an effective strategy to reduce
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …

The electrical and structural properties of V/Al-based n-contacts on n‐Al x Ga 1− x N with an
Al mole fraction x ranging from x= 0.75 to x= 0.95 are investigated. Ohmic n-contacts are …

III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators.
Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct …