ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses

A Kumar, K Preeti, SP Singh, S Lee, A Kaushik… - Materials Today, 2023 - Elsevier
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …

[HTML][HTML] Design implementations of ternary logic systems: A critical review

F Zahoor, RA Jaber, UB Isyaku, T Sharma, F Bashir… - Results in …, 2024 - Elsevier
In the electronics industry, binary devices have played a critical role since the development
of solid-state transistors. While binary technology associates devices' inherent ability to be …

Fully photon controlled synaptic memristor for neuro‐inspired computing

S Shrivastava, LB Keong, S Pratik… - Advanced Electronic …, 2023 - Wiley Online Library
The emerging optoelectronic memristive synapses having the advantages of both optics and
electronics exhibit a great potential in neuro‐inspired computing, which is a new generation …

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

N Elboughdiri, S Iqbal, S Abdullaev, M Aljohani… - RSC …, 2023 - pubs.rsc.org
We investigate the morphological, electrical, magnetic, and resistive switching properties of
(Co, Yb) co-ZnO for neuromorphic computing. By using hydrothermal synthesized …

[HTML][HTML] Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

J Park, S Kim - Results in Physics, 2022 - Elsevier
As the demand for neuromorphic computing technology increases, the need for high-density
resistive random access memory (RRAM) to meet data capacity expansion increases …

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

F Zahoor, FA Hussin, UB Isyaku, S Gupta, FA Khanday… - Discover Nano, 2023 - Springer
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …

Resistive switching and synaptic characteristics in ZnO/TaON-based RRAM for neuromorphic system

I Oh, J Pyo, S Kim - Nanomaterials, 2022 - mdpi.com
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …

Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application

K Komal, G Gupta, M Singh, B Singh - Journal of Alloys and Compounds, 2022 - Elsevier
Resistive switching memory, which combines simple architectures with the ability of high
density, high switching speed, and low power consumption, has sparked a lot of attention in …

An overview of critical applications of resistive random access memory

F Zahoor, A Nisar, UI Bature, H Abbas, F Bashir… - Nanoscale …, 2024 - pubs.rsc.org
The rapid advancement of new technologies has resulted in a surge of data, while
conventional computers are nearing their computational limits. The prevalent von Neumann …

Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect

S Yun, C Mahata, MH Kim, S Kim - Applied Surface Science, 2022 - Elsevier
We fabricated and characterized a Ni/ZnO/TiN memristor device designed to emulate an
artificial synapse for use in a neuromorphic system. Chemical and material characterization …