A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-
insulator-semiconductor high-electron-mobility transistors. The process starts from a 150 …

We report on our investigation of the electrical properties of metal/Al 2 O 3/GaN metal-
insulator-semiconductor capacitors. We determined the conduction band offset and interface …

This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …

This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …

Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples
were fabricated to investigate the effects of the etch-then-regrow process on device …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other
faces, making it the best choice for power device application. Detailed analysis of atomic …

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …