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Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
The past, the present, and the future of ferroelectric memories
Ferroelectric materials are characterized by two stable polarization states that can be
switched from one to another by applying an electrical field. As one of the most promising …
switched from one to another by applying an electrical field. As one of the most promising …
Review and perspective on ferroelectric HfO2-based thin films for memory applications
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …
increasing interest since 2011. They have various advantages such as Si-based …
Lanthanum-doped hafnium oxide: a robust ferroelectric material
Recently simulation groups have reported the lanthanide series elements as the dopants
that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …
that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
AG Chernikova, MG Kozodaev… - … applied materials & …, 2018 - ACS Publications
Hf0. 5Zr0. 5O2 thin films are one of the most appealing HfO2-based ferroelectric thin films,
which have been researched extensively for their applications in ferroelectric memory …
which have been researched extensively for their applications in ferroelectric memory …
Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1–x Zr x O2; HZO)
are a promising candidate for future applications, such as low-power memories and …
are a promising candidate for future applications, such as low-power memories and …