On the nature of majority and minority traps in β-Ga2O3: A review
In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3
The temperature-driven phase transformation of metastable κ-Ga 2 O 3 layers deposited on
sapphire was studied by high resolution TEM. Annealing experiments up to 1000° C were …
sapphire was studied by high resolution TEM. Annealing experiments up to 1000° C were …
Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector
C Wang, WH Fan, YC Zhang, PC Kang, WY Wu… - Ceramics …, 2023 - Elsevier
This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
Gallium oxide-based solar-blind ultraviolet photodetectors
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …
semiconducting material as a key building block for the applications of power electronics …
Influence of Polymorphism on the Electronic Structure of Ga2O3
The search for new wide-band-gap materials is intensifying to satisfy the need for more
advanced and energy-efficient power electronic devices. Ga2O3 has emerged as an …
advanced and energy-efficient power electronic devices. Ga2O3 has emerged as an …
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers
Electrical and optical properties of nominally-undoped high-resistivity κ-Ga 2 O 3 epitaxial
films are presented, along with the ultraviolet detection performance of solar-blind …
films are presented, along with the ultraviolet detection performance of solar-blind …
[HTML][HTML] Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy
M Kneiß, D Splith, P Schlupp, A Hassa… - Journal of Applied …, 2021 - pubs.aip.org
Novel devices based on orthorhombic κ-Ga 2 O 3 could enable solar blind infrared detection
or high-electron mobility transistors with large two-dimensional electron gas densities. Here …
or high-electron mobility transistors with large two-dimensional electron gas densities. Here …
Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3
Lightly n-type β-Ga 2 O 3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type
doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 10 16 cm− 2 …
doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 10 16 cm− 2 …