This article reviews current experimental and theoretical knowledge of the relaxation of
lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The …

The Handbook of Semiconductor Manufacturing Technology describes the individual
processes and manufacturing control, support, and infrastructure technologies of silicon …

SiGe hetero-structures have a high potential to improve the state-of-art Si devices
particularly VLSIs and add such new functions as optics and also provide a new scientific …

We have grown compositionally graded Ge x Si1− x layers on Si at 900° C with both
molecular beam epitaxy and rapid thermal chemical vapor deposition techniques. Triple …

A semiempirical kinetic model is presented which maps out the thermal budget for
processing of strained layer devices through epitaxial growth and postgrowth anneals. Misfit …

Modulation‐doped Si/Ge x Si1− x/Ge/Ge x Si1− x structures were fabricated in which a thin
Ge layer was employed as the conduction channel for the two‐dimensional hole gas. The …

An expression is derived for the critical thickness of heteroepitaxial films by taking the
energy minimization approach. It is exactly identical to the critical thickness obtained by …

▪ Abstract We review recent advances in our understanding of the epitaxial growth and
properties of SiGe/Si heterostructures for applications in high-speed field-effect transistors …

SiGe layers were formed on Si substrates by using the sputter epitaxy method. The growth
temperatures were 400 and 560° C, and the growth rates of the SiGe layers were about 2.7 …

We report measured Ge contents and growth rates for Si1− xGex films grown by very low
pressure chemical vapor deposition between 570–700° C. The ratio of Ge/Si was found to …