High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
AV Kudrin, VP Lesnikov, YA Danilov… - Semiconductor …, 2020 - iopscience.iop.org
The layers of a high-temperature novel GaAs: Fe diluted magnetic semiconductor (DMS)
with an average Fe content up to 20 at.% were grown on (001) i-GaAs substrates using a …
with an average Fe content up to 20 at.% were grown on (001) i-GaAs substrates using a …
Electronic and optical properties of single substitutional Mn dopant in CdSe nanocrystals and CdSe/ZnSe core/shell nanocrystals
W Sukkabot - The European Physical Journal Plus, 2023 - epjplus.epj.org
I employ a kinetic-exchange tight-binding method to determine the electronic structures and
optical characteristics of Mn-ion solitary dopant embedded in CdSe nanocrystals and …
optical characteristics of Mn-ion solitary dopant embedded in CdSe nanocrystals and …
Interplay between Mn-acceptor state and Dirac surface states in Mn-doped topological insulator
We investigate the properties of a single substitutional Mn impurity and its associated
acceptor state on the (111) surface of Bi 2 Se 3 topological insulator. Combining ab initio …
acceptor state on the (111) surface of Bi 2 Se 3 topological insulator. Combining ab initio …
Ab-initio studies on the electronic properties of Fe dopant in GaAs (1 1 0) surface
Z Fang, Z Yi - Computational Materials Science, 2016 - Elsevier
Using the first principles ground state method, the electronic properties of single Fe dopant
in bulk and GaAs (1 1 0) surface are studied. Our calculations show that on-site correlations …
in bulk and GaAs (1 1 0) surface are studied. Our calculations show that on-site correlations …
Substitutional Co dopant on the GaAs (110) surface: A first principles study
Z Fang, Z Yi - Physica B: Condensed Matter, 2016 - Elsevier
Using the first principles ground state method, the electronic properties of single Co dopant
replacing one Ga atom on the GaAs (110) surface are studied. Our calculated local density …
replacing one Ga atom on the GaAs (110) surface are studied. Our calculated local density …
Trend of the magnetic anisotropy for individual Mn dopants near the (1 1 0) GaAs surface
MR Mahani, A Pertsova, CM Canali - Journal of Physics …, 2014 - iopscience.iop.org
Using a microscopic finite-cluster tight-binding model, we investigate the trend of the
magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity …
magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity …
Spin dynamics of Mn impurities and their bound acceptors in GaAs
MR Mahani, A Pertsova, CM Canali - Physical Review B, 2014 - APS
We present results of tight-binding spin-dynamics simulations of individual and pairs of
substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical …
substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical …
Observation of the symmetry of core states of a single Fe impurity in GaAs
We report the direct observation of two mid-gap core d states of differing symmetry for a
single Fe atom embedded in GaAs. These states are distinguished by the strength of their …
single Fe atom embedded in GaAs. These states are distinguished by the strength of their …
Fine structure and real space analysis of neutral acceptor states in GaAs
Fine structure and real space analysis of neutral acceptor states in GaAs - IOPscience This
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Scanning Tunneling Microscopy Studies of Fe Dopants on GaAs (110)
R Smith - 2022 - rave.ohiolink.edu
This thesis uses scanning tunneling microscopy (STM) to study Fe dopants deposited on
GaAs (110). Fe, a transition metal, can introduce magnetism into a nonmagnetic …
GaAs (110). Fe, a transition metal, can introduce magnetism into a nonmagnetic …