Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …

In this paper, a diamond-silicon (C-Si) interface was constructed on a (1 1 1) diamond
substrate by annealing the SiO 2 gate insulator in a reductive atmosphere. Corresponding …

This paper presents a reliability study of a conventional 650 V SiC planar MOSFET
subjected to pulsed HTRB (High-Temperature Reverse Bias) stress and negative HTGB …

In this letter, we report on a unique positive bias stress (PBS) instability observed in the
heterogeneous Ga2O3-on-SiC (GaOSiC) metal-oxide-semiconductor field-effect transistor …

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …

Carbon-related point defects on the 4H-SiC surface are essential for understanding the
origin of defects at the SiO 2/SiC interface and improving the quality of epitaxial materials. In …

The electric properties of the carbon dangling-bond (P bC) center at a thermally oxidized 4H-
SiC (0001)/SiO 2 interface are investigated. We experimentally and theoretically determine …

Post‐oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC
stack without introducing foreign atoms. In order to reveal the annealing mechanism at …

In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide
(NO) on the properties of SiO 2/4H–SiC interfaces in n-channel lateral MOSFETs are …

To clarify the cause of the low channel conductivity at the SiO 2/4H–SiC interface, the
wavefunction at the SiC conduction band minimum was calculated using density functional …