Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …

Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

Negative capacitance is a newly discovered state of ferroelectric materials that holds
promise for electronics applications by exploiting a region of thermodynamic space that is …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

The development of organic thin-film transistors (OTFTs) with low power consumption and
high gain will advance many flexible electronics. Here, by combining solution-processed …

The negative-capacitance field-effect transistor (NC-FET) has attracted tremendous research
efforts. However, the lack of a clear physical picture and design rule for this device has led to …

We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO 2 gate
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …

The negative capacitance (NC) effect in ferroelectric thin films has attracted a great deal of
attention from the material and semiconductor device communities because it could be a …

In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …