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Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation
H Liu, Y Wang, Y Lv, S Han, T Han… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In the letter, high performance lateral-Ga 2 O 3 metal-semiconductor field effect transistors
(MESFETs) with ultra-high breakdown voltage (over 10 kV are demonstrated. Planar …
(MESFETs) with ultra-high breakdown voltage (over 10 kV are demonstrated. Planar …
3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism
This Letter demonstrates a high-performance 3.3 kV-class β-Ga 2 O 3 vertical heterojunction
diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β …
diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β …
β-Ga₂O₃ Lateral Schottky Barrier Diodes With> 10 kV Breakdown Voltage and Anode Engineering
In this letter, we demonstrated-Ga2O3 lateral Schottky barrier diodes (SBDs) with
breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode …
breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode …
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
In this work, we have achieved novel lateral enhancement-mode (EM) and depletion-mode
(DM)-Ga2O3 metal-oxide-semiconductor junction field-effect-transistors (MOS-JFETs) …
(DM)-Ga2O3 metal-oxide-semiconductor junction field-effect-transistors (MOS-JFETs) …
Beta-Gallium Oxide Material and Device Technologies
Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a
high temperature without plasma excitation. The etching was done selectively in window …
high temperature without plasma excitation. The etching was done selectively in window …