Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Two-dimensional semiconductors (2DSCs) have attracted considerable attention as
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …

As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact
resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts …

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional
materials with unique electronic and optical attributes. Transition metal dichalcogenides …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

The electron transport properties of atomically thin semiconductors such as MoS 2 have
attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms …