20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion
This work investigates the suppressed distortion and improved analog/linearity performance
metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel …
metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel …
Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates
In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO
substrate is proposed and optimization is done for channel length, gate length and gate …
substrate is proposed and optimization is done for channel length, gate length and gate …
White light-emitting, biocompatible, water-soluble metallic magnesium nanoclusters for bioimaging applications
Abstract Ultra-small (1.6 nm), water-soluble, white light-emitting (WLE), highly stable (∼ 8
months) BSA templated metallic (Mg 0) nanoclusters (fluorescent magnesium nanoclusters …
months) BSA templated metallic (Mg 0) nanoclusters (fluorescent magnesium nanoclusters …
Growth time and its associated physico-chemical properties of electrodeposited CdS: Mg thin film
Simplified two-electrode electrochemical deposition technique with glass/tin-doped indium
oxide (glass/ITO) has been used to grow Mg-doped CdS thin films. As precursors, CdCl2 …
oxide (glass/ITO) has been used to grow Mg-doped CdS thin films. As precursors, CdCl2 …
Realizing the potentials of density functional theory (DFT) and of the materials genome initiative (MGI)
D Bagayoko, YI Diakité - MRS Advances, 2023 - Springer
From 1964 and 1965 to present, the wide spread utilization of an incomplete density
functional theory (DFT) has led to mixed results: The second theorem of the theory asserts …
functional theory (DFT) has led to mixed results: The second theorem of the theory asserts …
Coexistence of photoresponse and light-induced memresistive characteristics in zinc oxide (ZnO)-reduced graphene oxide (rGO) bilayer thin film
We have investigated photo-response as well as resistive switching behaviour in hybrid zinc
oxide (ZnO)/reduced graphene oxide (rGO) bilayer thin film, equipped through sol–gel …
oxide (ZnO)/reduced graphene oxide (rGO) bilayer thin film, equipped through sol–gel …
Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)
We report the results from self-consistent calculations of electronic, transport, and bulk
properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio …
properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio …