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Femtosecond laser direct writing of flexible electronic devices: a mini review
S Wang, J Yang, G Deng, S Zhou - Materials, 2024 - mdpi.com
By virtue of its narrow pulse width and high peak power, the femtosecond pulsed laser can
achieve high-precision material modification, material additive or subtractive, and other …
achieve high-precision material modification, material additive or subtractive, and other …
[HTML][HTML] Black phosphorus: The rise of phosphorene in 2D materials applications
Few layers Black phosphorus (BP) and phosphorene are two-dimensional (2D) materials
renowned for their adjustable bandgaps, high carrier mobility, and anisotropic conductivity …
renowned for their adjustable bandgaps, high carrier mobility, and anisotropic conductivity …
Semiconductivity induced by spin–orbit coupling in Pb9Cu(PO4)6O
H Bai, J Ye, L Gao, C Zeng, W Liu - Scientific Reports, 2023 - nature.com
Recently, a possible room-temperature superconductor known as LK-99 (Pb10-xCux (PO4)
6O (0.9< x< 1.1)) has sparked a wave of research. However, many experimental works have …
6O (0.9< x< 1.1)) has sparked a wave of research. However, many experimental works have …
Design strategies and insights of flexible infrared optoelectronic sensors
Y Liang, W Ran, D Kuang, Z Wang - Journal of Semiconductors, 2025 - iopscience.iop.org
Infrared optoelectronic sensing is the core of many critical applications such as night vision,
health and medication, military, space exploration, etc. Further including mechanical …
health and medication, military, space exploration, etc. Further including mechanical …
Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer
The effect of Bi incorporation into In x Ga 1-x As lattice on the nanosecond pulsed electric
field dependence of the drift velocity of electrons in n-type In x Ga 1-x As 1-y Bi y alloys with …
field dependence of the drift velocity of electrons in n-type In x Ga 1-x As 1-y Bi y alloys with …
2D compounds with heterolayered architecture for infrared photodetectors
H Gu, T Zhang, Y Wang, T Zhou, H Chen - Chemical Science, 2024 - pubs.rsc.org
Compounds with heterolayered architecture, as a family of the two-dimensional (2D)
materials, are composed of alternating positive and negative layers. Their physical …
materials, are composed of alternating positive and negative layers. Their physical …
Strain Engineered Semiconductor Nanomembranes for Photonic and Optoelectronic Applications
When semiconductor crystals are made into the form of thin sheets, ie, nanomembranes,
their properties and behaviors may be remarkably different from their bulk counterparts. A …
their properties and behaviors may be remarkably different from their bulk counterparts. A …
SnSb monolayer: A promising 2D candidate for high sensitivity NO2 gas sensing
Data regarding the adsorption-sensing characteristics of two-dimensional (2D) materials are
crucial for guiding their design and use in gas sensors. XSb (X= Si, Ge, Sn) are novel 2D …
crucial for guiding their design and use in gas sensors. XSb (X= Si, Ge, Sn) are novel 2D …
Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness
The recent exploration of porous Germanium (PGe) techniques marks a significant
advancement in the scalable production of detachable Ge membranes and devices …
advancement in the scalable production of detachable Ge membranes and devices …
Self‐Powered Graphene/Black‐Ge Photodetectors Enhanced by Simultaneous Nanotexturing and Self‐Passivation
Black germanium (Ge) exhibits exceptional light absorption, holding significant promise for
optoelectronic applications. However, achieving self‐powered photodetection performance …
optoelectronic applications. However, achieving self‐powered photodetection performance …