Probing single vacancies in black phosphorus at the atomic level
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy
(STM/STS) and electronic structure calculations, we characterize the structural and …
(STM/STS) and electronic structure calculations, we characterize the structural and …
Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs
Local manipulation of electric fields at the atomic scale may enable new methods for
quantum transport and creates new opportunities for field control of ferromagnetism and spin …
quantum transport and creates new opportunities for field control of ferromagnetism and spin …
Tunable control over the ionization state of single Mn acceptors in GaAs with defect-induced band bending
A scanning tunneling microscope was used to study the ionization of single Mn acceptors in
GaAs (110). The ionization state switches when the GaAs valence band is bent across a Mn …
GaAs (110). The ionization state switches when the GaAs valence band is bent across a Mn …
Manipulation of subsurface donors in ZnO
H Zheng, A Weismann, R Berndt - Physical Review letters, 2013 - APS
Single donors close to the ZnO (0001) surface are investigated with scanning tunneling
microscopy. Their binding energies and depths are determined from spatially resolved …
microscopy. Their binding energies and depths are determined from spatially resolved …
Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants
Understanding the electronic properties of dopants near an interface is a critical challenge
for nanoscale devices. We have determined the effect of dielectric mismatch and quantum …
for nanoscale devices. We have determined the effect of dielectric mismatch and quantum …
Bistable behavior of silicon atoms in the (110) surface of gallium arsenide
JK Garleff, AP Wijnheijmer, CN vd Enden… - Physical Review B …, 2011 - APS
Reversibly switching between the hydrogenic substitutional donor configuration and a
previously unknown negatively charged interstitial configuration of silicon (Si) impurities in …
previously unknown negatively charged interstitial configuration of silicon (Si) impurities in …
Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs
The authors investigated the influence of the tip work function on the signatures of zinc in
gallium arsenide with scanning tunneling microscopy and spectroscopy. By deliberately …
gallium arsenide with scanning tunneling microscopy and spectroscopy. By deliberately …
Electronic structure and magnetic properties of Mn and Fe impurities near the GaAs (110) surface
Combining density functional theory calculations and microscopic tight-binding models, we
investigate theoretically the electronic and magnetic properties of individual substitutional …
investigate theoretically the electronic and magnetic properties of individual substitutional …
Ab initio calculations of the magnetic properties of Mn impurities on GaAs (110) surfaces
We present a computational study of individual and pairs of substitutional Mn impurities on
the (110) surface of GaAs samples based on density functional theory. We focus on the …
the (110) surface of GaAs samples based on density functional theory. We focus on the …
Influence of the local environment on Mn acceptors in GaAs
As transistors continue to shrink toward nanoscale dimensions, their characteristics are
increasingly dependent on the statistical variations of impurities in the semiconductor …
increasingly dependent on the statistical variations of impurities in the semiconductor …