[HTML][HTML] High-k/Ge MOSFETs for future nanoelectronics
Y Kamata - Materials today, 2008 - Elsevier
Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Synthesis and characterization of hexagonal boron nitride as a gate dielectric
Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a
conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD …
conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal–insulator–semiconductor characteristics
K Kita, S Suzuki, H Nomura, T Takahashi… - Japanese journal of …, 2008 - iopscience.iop.org
From the studies on the thermal desorption behaviors of GeO 2 film and its impact on the
electrical properties of GeO 2/Ge metal–insulator–semiconductor (MIS) capacitors, it was …
electrical properties of GeO 2/Ge metal–insulator–semiconductor (MIS) capacitors, it was …
Hafnium oxide gate dielectrics on sulfur-passivated germanium
Sulfur passivation of Ge (100) is achieved using aqueous ammonium sulfide (NH 4) 2 S
(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ …
(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ …
Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric
N Lu, W Bai, A Ramirez, C Mouli, A Ritenour… - Applied Physics …, 2005 - pubs.aip.org
We report a study on Ge diffusion and its impact on the electrical properties of Ta N∕ Hf O
2∕ Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on …
2∕ Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on …
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor
In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
Ge (001) surface cleaning methods for device integration
Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …