The electronic functionalities of metal oxides comprise conductors, semiconductors, and
insulators. Metal oxides have attracted great interest for construction of large‐area …

Solution-processed metal-oxide thin-film transistors (TFTs) are considered as one of the
most favorable devices for next-generation, large-area flexible electronics. In this paper, we …

The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has
been proposed with the objective of achieving high performance and reducing costs for next …

Metal-oxide thin-film transistors (MO TFTs) with suitable device performances such as high
field-effect mobility (μ FE), low subthreshold swing, high ON/OFF current ratio, and excellent …

Thin-film transistor (TFT) is a essential device for future electronics driving the next level of
digital transformation. The development of metal-oxide-semiconductor (MOS) TFTs is …

Abstract In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐
generation memory device because of its outstanding electrical properties. However, the …

We report a highly stable, nanocrystalline, zinc oxide (ZnO) thin-film transistor (TFT)
fabricated by spray pyrolysis using purified ZrO x as a gate insulator. The crystalline ZnO …

Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher
energy efficiency, and compatibility with rapid prototy** compared to their counterparts …

We studied the effect of Gd do** on the structural properties of solution processed,
crystalline In 2 O 3 for thin-film transistor (TFT) application. With increasing Gd in In 2 O 3 up …

The effect of purification of oxide semiconductor precursor on the performance of amorphous
indium–zinc–tin oxide (a‐IZTO) thin‐film transistors (TFT) using a high‐k zirconium oxide …