Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …

We report the results of an investigation of low-frequency excess noise in high-current
diamond diodes. It was found that the electronic excess noise of the diamond diodes is …

Boron doped diamonds (BDD) with boron concentration above 10 19 at./cm 3, grown under
conditions of high isostatic pressure by the temperature gradient method, were studied by …

We demonstrated the fabrication and operation of vertical diamond Schottky barrier diodes
(SBDs) by inserting an ultrathin lanthanum hexaboride (LaB 6) interlayer at the Zr/diamond …

The local structure around boron doped in 6H-type silicon carbide (SiC) was investigated
using neutron holography. Three-dimensional atomic images reconstructed from multiple …

Diamond n-type layers are crucial for the development of a new bipolar diamond-based
electronic technology. However, the difficulties to incorporate impurity atoms into the …

We present site-coincident imaging of a high dislocation density boron-doped chemical
vapor deposition-grown homoepitaxial (001) diamond film using electron channeling …

Boron-doped diamond is a crucial material for ultra-precision devices, with its mechanical
properties and internal defect distribution being key factors that impact the efficiency and …

Trigons on the surface of diamonds are correlated with defects in their crystal lattices.
However, due to the rarity of HPHT diamond octahedrons. Few studies have focused on …