Intermediate band solar cells: Recent progress and future directions

Y Okada, NJ Ekins-Daukes, T Kita, R Tamaki… - Applied physics …, 2015 - pubs.aip.org
Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed.
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …

Understanding intermediate-band solar cells

A Luque, A Martí, C Stanley - nature photonics, 2012 - nature.com
The intermediate-band solar cell is designed to provide a large photogenerated current
while maintaining a high output voltage. To make this possible, these cells incorporate an …

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

J Wu, S Chen, A Seeds, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Will we exceed 50% efficiency in photovoltaics?

A Luque - Journal of Applied Physics, 2011 - pubs.aip.org
Solar energy is the most abundant and reliable source of energy we have to provide for the
multi-terawatt challenge we are facing. Although huge, this resource is relatively dispersed …

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Y Okada, T Morioka, K Yoshida, R Oshima… - Journal of applied …, 2011 - pubs.aip.org
We have developed a technique to fabricate quantum dot (QD) solar cells with direct do**
of Si into InAs QDs in GaNAs strain-compensating matrix in order to control the quasi-Fermi …

Strong enhancement of solar cell efficiency due to quantum dots with built-in charge

KA Sablon, JW Little, V Mitin, A Sergeev, N Vagidov… - Nano …, 2011 - ACS Publications
We report a 50% increase in the power conversion efficiency of InAs/GaAs quantum dot
solar cells due to n-do** of the interdot space. The n-doped device was compared with …

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

E Antolín, A Martí, CD Farmer, PG Linares… - Journal of Applied …, 2010 - pubs.aip.org
Intermediate band solar cells (IBSCs) fabricated to date from In (Ga) As/GaAs quantum dot
arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap …

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

NS Beattie, P See, G Zoppi, PM Ushasree… - Acs …, 2017 - ACS Publications
The efficiency of a solar cell can be substantially increased by opening new energy gaps
within the semiconductor band gap. This creates additional optical absorption pathways …

Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules

T Sogabe, Y Shoji, M Ohba, K Yoshida, R Tamaki… - Scientific reports, 2014 - nature.com
We report for the first time a successful fabrication and operation of an InAs/GaAs quantum
dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to …

Review of experimental results related to the operation of intermediate band solar cells

I Ramiro, A Martí, E Antolin… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …