Spin-orbit torque switching of magnetic tunnel junctions for memory applications
V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …
classes of materials and devices using electric currents, leading to novel spintronic memory …
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …
[BOOK][B] Handbook of magnetic materials
EH Brück - 2017 - books.google.com
Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …
last few decades and its applications in research, notably the magnetism of several classes …
Nonvolatile low-cost approximate spintronic full adders for computing in memory architectures
In this article, four novel approximate full-adder (AXFA) circuits based on the emerging
magnetic tunnel junction (MTJ) device is proposed. The proposed magnetic FAs (MFAs) …
magnetic tunnel junction (MTJ) device is proposed. The proposed magnetic FAs (MFAs) …
Spin field effect transistors and their applications: A survey
Among the various devices being researched as possible alternative for conventional scaled
down transistor, the spin-FET (Datta-Das transistor) held some early promise. Various …
down transistor, the spin-FET (Datta-Das transistor) held some early promise. Various …
Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Spin Hall Electrode
Y Kato, Y Saito, H Yoda, T Inokuchi, S Shirotori… - Physical Review …, 2018 - APS
Improving the write efficiency of magnetic tunnel junctions (MTJs) by using spin-orbit torque
(SOT) is essential for realizing high-density spintronic memory. Here, we investigate a …
(SOT) is essential for realizing high-density spintronic memory. Here, we investigate a …
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
T Inokuchi, H Yoda, Y Kato, M Shimizu… - Applied Physics …, 2017 - pubs.aip.org
A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-
anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write …
anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write …
Feedback voltage driven chaos in a three-terminal spin-torque oscillator
T Taniguchi - Physical Review B, 2024 - APS
In this work, we report an excitation of chaos and a nontrivial magnetization switching via
transient chaos in a three-terminal spin-torque oscillator (STO). The driving force of the …
transient chaos in a three-terminal spin-torque oscillator (STO). The driving force of the …
Spintronic processing unit within voltage-gated spin Hall effect MRAMs
Realization of the unity of processing and storage in the same chip/die has initialized a
promising research direction of processing-in-memory (PIM), attempting to address the …
promising research direction of processing-in-memory (PIM), attempting to address the …
Energy efficient computing with high-density, field-free STT-assisted SOT-MRAM (SAS-MRAM)
Energy efficient computing hardware has played an instrumental role in enabling novel
abundant data applications and transformative new user experiences. As we look forward …
abundant data applications and transformative new user experiences. As we look forward …