Luminescence properties of defects in GaN
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
On the origin of the yellow luminescence band in GaN
MA Reshchikov - physica status solidi (b), 2023 - Wiley Online Library
The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐
related luminescence in unintentionally doped GaN. The discovery of the mechanism …
related luminescence in unintentionally doped GaN. The discovery of the mechanism …
[LIBRO][B] Semiconductors and semimetals
RK Willardson, AC Beer - 1977 - books.google.com
A highly important area where semiconductors and semimetals technology plays a major
role is that of optical Sensing devices. Receiving initial impetus because of infrared detector …
role is that of optical Sensing devices. Receiving initial impetus because of infrared detector …
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow
luminescence (YL) band gives way to a green luminescence (GL) band at high excitation …
luminescence (YL) band gives way to a green luminescence (GL) band at high excitation …
Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN
Several of the optical transitions in ZnO and GaN appear to derive from a similar origin and
have considerable overlap in the energy regions where they occur. In particular the donor …
have considerable overlap in the energy regions where they occur. In particular the donor …
[LIBRO][B] The handbook of photonics
Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …
Handbook of Photonics, Second Edition explores recent advances that have affected this …
Gallium nitride nanowire based nanogenerators and light-emitting diodes
Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type
GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by …
GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by …
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study
deep impurity transitions in Al x Ga 1− x N (0⩽ x⩽ 1) epilayers. Two groups of deep impurity …
deep impurity transitions in Al x Ga 1− x N (0⩽ x⩽ 1) epilayers. Two groups of deep impurity …
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
R Armitage, W Hong, Q Yang, H Feick… - Applied physics …, 2003 - pubs.aip.org
Carbon-doped GaN layers grown by molecular-beam epitaxy are studied with
photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped …
photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped …
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn) N quantum wells by visualization of hot carriers in …
M Binder, A Nirschl, R Zeisel, T Hager… - Applied Physics …, 2013 - pubs.aip.org
We report the direct observation of hot carriers generated by Auger recombination via
photoluminescence spectroscopy on tailored (AlGaIn) N multiple quantum well (QW) …
photoluminescence spectroscopy on tailored (AlGaIn) N multiple quantum well (QW) …