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Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications
The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four
inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si) by the spin-coating process at 2000 …
inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si) by the spin-coating process at 2000 …
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer
The current–voltage (I–V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with
native insulator layer were measured in the temperature range of 150–375K. The estimated …
native insulator layer were measured in the temperature range of 150–375K. The estimated …
Significant enhancement in photosensitivity, responsivity, detectivity and quantum efficiency of Co3O4 nanostructured thin film-based photodetectors through Mo …
Herein, we have developed the high-performance photodetector diodes (p-Co 3 O4/n-Si and
p-Mo@ Co 3 O 4/n-Si) by spray pyrolysis route for modern optoelectronic devices. The …
p-Mo@ Co 3 O 4/n-Si) by spray pyrolysis route for modern optoelectronic devices. The …
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator–
semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were measured in the …
semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were measured in the …
Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes
A Tataroğlu, Ş Altındal - Microelectronic engineering, 2006 - Elsevier
The current–voltage (I–V) characteristics of metal–insulator–semiconductor Al/SiO2/p-Si
(MIS) Schottky diodes were measured at room temperature (300K). In addition, capacitance …
(MIS) Schottky diodes were measured at room temperature (300K). In addition, capacitance …
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–
semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150 …
semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150 …
The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
In order to interpret in detail the experimentally observed current–voltage–temperature (I–V–
T) and capacitance–voltage–temperature (C–V–T) results of Al/p-Si metal–semiconductor …
T) and capacitance–voltage–temperature (C–V–T) results of Al/p-Si metal–semiconductor …
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes
The variation in electrical characteristics of Au/SnO2/n-Si (MIS) Schottky diodes have been
systematically investigated as a function of temperature by using forward bias current …
systematically investigated as a function of temperature by using forward bias current …
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
O Pakma, N Serin, T Serin, Ş Altındal - Journal of Applied Physics, 2008 - pubs.aip.org
The current-voltage (IV) characteristics of Al/TiO 2/p-Si metal-insulator-semiconductor (MIS)
structures have been investigated in the temperature range of 80–300 K. An abnormal …
structures have been investigated in the temperature range of 80–300 K. An abnormal …
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type
Ni/4H–SiC samples of do** density 7.1× 10 15 cm− 3 has been investigated over the …
Ni/4H–SiC samples of do** density 7.1× 10 15 cm− 3 has been investigated over the …