Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Recent developments and perspectives for memristive devices based on metal oxide nanowires

G Milano, S Porro, I Valov… - Advanced Electronic …, 2019 - Wiley Online Library
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

Metal–oxide RRAM

HSP Wong, HY Lee, S Yu, YS Chen, Y Wu… - Proceedings of the …, 2012 - ieeexplore.ieee.org
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

S Choi, SH Tan, Z Li, Y Kim, C Choi, PY Chen… - Nature materials, 2018 - nature.com
Although several types of architecture combining memory cells and transistors have been
used to demonstrate artificial synaptic arrays, they usually present limited scalability and …

Improved high-efficiency organic solar cells via incorporation of a conjugated polyelectrolyte interlayer

JH Seo, A Gutacker, Y Sun, H Wu… - Journal of the …, 2011 - ACS Publications
The power conversion efficiencies of bulk heterojunction (BHJ) solar cells can be increased
from 5 to 6.5% by incorporating an ultrathin conjugated polyelectrolyte (CPE) layer between …

Exploitation of bacterial strains for microplastics (LDPE) biodegradation

VM Pathak - Chemosphere, 2023 - Elsevier
Plastic waste (microplastics) is one of the primary sources of environmental pollutants,
serving as a reservoir for them. In this study, previously isolated and screened polymer …

The strategies of filament control for improving the resistive switching performance

T Li, H Yu, SHY Chen, Y Zhou, ST Han - Journal of Materials Chemistry …, 2020 - pubs.rsc.org
With the rapid application of artificial intelligence in daily life and work, the traditional von
Neumann architecture device faces the limitation of scalability and high energy …

Filament Engineering of Two‐Dimensional h‐BN for a Self‐Power Mechano‐Nociceptor System

G Ding, RS Chen, P **_effect_on_performance_of_HfO2_based_resistive_switching_memory_devices_using_implantation_approach/links/02e7e5320f68167aef000000/Gd-do**-effect-on-performance-of-HfO2-based-resistive-switching-memory-devices-using-implantation-approach.pdf" data-clk="hl=en&sa=T&oi=gga&ct=gga&cd=8&d=7825031093774620021&ei=vUCvZ6S7MOehieoP4b3H4A0" data-clk-atid="dZXSLFIYmGwJ" target="_blank">[PDF] researchgate.net

Gd-do** effect on performance of HfO2 based resistive switching memory devices using implantation approach

H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han… - Applied Physics …, 2011 - pubs.aip.org
An implantation do** approach is implemented to fabricate Gd-doped HfO 2 resistive
random access memory (RRAM) devices. The significantly enhanced performances are …

One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …