Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC
has properties similar to both silicon and diamond but has two key advantages:(i) it is a polar …

In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation
detectors to be used in high-temperature, high-radiation environments. Such harsh …

Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied
thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky …

This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …

Fast neutron response measurements are reported for radiation detectors based on large-
volume SiC pin diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions …

Silicon carbide (SiC) radiation detectors are being developed for high-temperature
applications in harsh radiation environments. Among these applications are characterization …

Silicon carbide (SiC) detector shows sufficient merits for the application of radiation
measurement in harsh neutron radiation fields due to the strong radiation tolerance, good …