New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors
This paper presents a novel approach to the efficient extraction of parasitic resistances in
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …
Evolution of crystal quality and stress in the early stages of GaN-on-Si (111) MOVPE with a single AlN buffer layer
C Liu, H Sodabanlu, M Sugiyama, Y Nakano - Vacuum, 2025 - Elsevier
As an important field of “III-V on Silicon” optoelectronic integration industry, GaN-on-Si has
attracted intensive study for over two decades. Efforts are ongoing to identify effective …
attracted intensive study for over two decades. Efforts are ongoing to identify effective …