Localization of trap** effects in GaN HEMTs with pulsed S-parameters and compact models
P Beleniotis, F Schnieder… - 2022 17th European …, 2022 - ieeexplore.ieee.org
Reliable operation at high frequencies has established GaN-based electronics in the high-
power and high-frequency market. Investigating the impact of trap** effects on the …
power and high-frequency market. Investigating the impact of trap** effects on the …
Physics-based trap modeling of GaN HEMTs
P Beleniotis - 2025 - opus4.kobv.de
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as the
preferred choice for telecommunication system designs, owing to their superior power levels …
preferred choice for telecommunication system designs, owing to their superior power levels …
Transistor GaN sur Si 200mm compatible CMOS pour l'amplification de puissance en bande Ka: optimisation de l'empilement de grille
A Chanuel - 2022 - theses.hal.science
La brique de grille des transistors GaN nécessite un dimensionnement plus compact avec
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …