Recent progress of amorphous nanomaterials
J Kang, X Yang, Q Hu, Z Cai, LM Liu, L Guo - Chemical Reviews, 2023 - ACS Publications
Amorphous materials are metastable solids with only short-range order at the atomic scale,
which results from local intermolecular chemical bonding. The lack of long-range order …
which results from local intermolecular chemical bonding. The lack of long-range order …
Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design
In this paper, we present a compact model for metal-oxide-based resistive random access
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta… - … on electron devices, 2015 - ieeexplore.ieee.org
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
In this paper, the use of HfO 2-based oxide-based resistive memory (OxRAM) devices
operated in binary mode to implement synapses in a convolutional neural network (CNN) is …
operated in binary mode to implement synapses in a convolutional neural network (CNN) is …
Filament growth and resistive switching in hafnium oxide memristive devices
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …
switching model for the device is proposed, taking into account important experimental and …
[LLIBRE][B] Resistive random access memory (RRAM)
S Yu - 2016 - books.google.com
RRAM technology has made significant progress in the past decade as a competitive
candidate for the next generation non-volatile memory (NVM). This lecture is a …
candidate for the next generation non-volatile memory (NVM). This lecture is a …
Experimental characterization of physical unclonable function based on 1 kb resistive random access memory arrays
In this letter, we propose a reliable design of physical unclonable function (PUF) exploiting
resistive random access memory (RRAM). Unlike the conventional silicon PUFs based on …
resistive random access memory (RRAM). Unlike the conventional silicon PUFs based on …
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive
random access memories in high resistive state (HRS). The current fluctuations are …
random access memories in high resistive state (HRS). The current fluctuations are …
Hardware design and the competency awareness of a neural network
The ability to estimate the uncertainty of predictions made by a neural network is essential
when applying neural networks to tasks such as medical diagnosis and autonomous …
when applying neural networks to tasks such as medical diagnosis and autonomous …
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …