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Halide Vapor Phase Epitaxy of Ge from an Elemental Source
E Winter da Costa, M Goh, KL Schulte… - Crystal Growth & …, 2025 - ACS Publications
Halide vapor phase epitaxy shows promise for low-cost photovoltaic device manufacturing
because of its high growth rates and lower cost elemental precursors but previously has not …
because of its high growth rates and lower cost elemental precursors but previously has not …
Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness
The recent exploration of porous Germanium (PGe) techniques marks a significant
advancement in the scalable production of detachable Ge membranes and devices …
advancement in the scalable production of detachable Ge membranes and devices …