High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
Breakthrough in silicon photonics technology in telecommunications, biosensing, and gas sensing
Silicon photonics has been an area of active research and development. Researchers have
been working on enhancing the integration density and intricacy of silicon photonic circuits …
been working on enhancing the integration density and intricacy of silicon photonic circuits …
Recent progress of III–V quantum dot infrared photodetectors on silicon
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
Opportunities for photonic integrated circuits in optical gas sensors
A Hänsel, MJR Heck - Journal of Physics: Photonics, 2020 - iopscience.iop.org
In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing
applications is discussed. Optical detection systems can be found at the high-end of the …
applications is discussed. Optical detection systems can be found at the high-end of the …
High-speed photodetectors for microwave photonics
This paper reviews high-power photodiodes, waveguide photodetectors, and integrated
photodiode-antenna emitters with bandwidths up to 150 GHz. Results from heterogeneous …
photodiode-antenna emitters with bandwidths up to 150 GHz. Results from heterogeneous …
Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors,
monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth …
monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth …
Transfer-print integration of GaAs pin photodiodes onto silicon nitride waveguides for near-infrared applications
We demonstrate waveguide-detector coupling through the integration of GaAs pin
photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer …
photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer …
Recent Progress in III–V Photodetectors Grown on Silicon
C Zeng, D Fu, Y **, Y Han - Photonics, 2023 - mdpi.com
An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …
Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators
Efficient photodetectors (PDs) and lasers are critical components in silicon photonics
technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) …
technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) …
Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water
Tellurium (Te)-doped black silicon (Si) with enhanced absorption and photoelectric
performance over a broad wavelength range of 0.2–2.5 μm was obtained using …
performance over a broad wavelength range of 0.2–2.5 μm was obtained using …