Atom probe tomography

B Gault, A Chiaramonti, O Cojocaru-Mirédin… - Nature Reviews …, 2021 - nature.com
Atom probe tomography (APT) provides three-dimensional compositional map** with sub-
nanometre resolution. The sensitivity of APT is in the range of parts per million for all …

Recent progress in microstructural hydrogen map** in steels: quantification, kinetic analysis, and multi-scale characterisation

M Koyama, M Rohwerder, CC Tasan… - Materials Science …, 2017 - Taylor & Francis
This paper gives an overview of recent progress in microstructure-specific hydrogen
map** techniques. The challenging nature of map** hydrogen with high spatial …

Three-dimensional nanoscale characterisation of materials by atom probe tomography

A Devaraj, DE Perea, J Liu, LM Gordon… - International …, 2018 - Taylor & Francis
The development of three-dimensional (3-D), characterisation techniques with high spatial
and mass resolution is crucial for understanding and develo** advanced materials for …

[HTML][HTML] Atom probe crystallography

B Gault, MP Moody, JM Cairney, SP Ringer - Materials Today, 2012 - Elsevier
This review addresses new developments in the emerging area of “atom probe
crystallography”, a materials characterization tool with the unique capacity to reveal both …

Atom probe tomography spatial reconstruction: Status and directions

DJ Larson, B Gault, BP Geiser, F De Geuser… - Current Opinion in Solid …, 2013 - Elsevier
In this review we present an overview of the current atom probe tomography spatial data
reconstruction paradigm, and explore some potential routes to improve the current …

Reconstructing atom probe data: A review

F Vurpillot, B Gault, BP Geiser, DJ Larson - Ultramicroscopy, 2013 - Elsevier
Atom probe tomography stands out from other materials characterisation techniques mostly
due to its capacity to map individual atoms in three-dimensions with high spatial resolution …

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

B Guerguis, R Cuduvally, RJH Morris, G Arcuri… - Ultramicroscopy, 2024 - Elsevier
This study investigates the impact of the surface electric field on the quantification accuracy
of boron (B) implanted silicon (Si) using atom probe tomography (APT). The Si Charge-State …

Structure and properties of nanoglasses

Y Ivanisenko, C Kübel, SH Nandam… - Advanced …, 2018 - Wiley Online Library
Nanoglasses represent a novel structural modification of amorphous materials, exhibiting
properties and structural details that are markedly different from those observed in metallic …

Understanding atom probe's analytical performance for iron oxides using correlation histograms and ab initio calculations

SH Kim, S Bhatt, DK Schreiber… - New Journal of …, 2024 - iopscience.iop.org
Field evaporation from ionic or covalently bonded materials often leads to the emission of
molecular ions. The metastability of these molecular ions, particularly under the influence of …

Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects

DR Diercks, BP Gorman, R Kirchhofer… - Journal of Applied …, 2013 - pubs.aip.org
The field evaporation behavior of c-axis GaN nanowires was explored in two different laser-
pulsed atom probe tomography (APT) instruments. Transmission electron microscopy …