The emergence of memristive devices plays a significant role to promoting the development
of electronics in the post-Moore era, especially in the fields of information storage, artificial …

Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

Here, resistive switching (RS) devices are fabricated using naturally abundant, nontoxic,
biocompatible, and biodegradable biomaterials. For this purpose, 1D chitosan nanofibers …

In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …

In this work, CuO electrodes were rapidly synthesized using a hydrothermal method for
supercapacitors. The effect of precursor concentration on the electrochemical performance …

This research investigates the photoelectrochemical (PEC) water splitting capabilities of Cu-
based metal–organic framework (MOF)-sensitized one-dimensional (1D) metal oxide …

Cutting edge science and technology needs high quality data storage devices for their
applications in artificial intelligence and digital industries. Resistive random access memory …

In recent years, layered materials have gained attention in energy storage application due to
their high surface to volume ratio and stable nanoarchitecture. Herein, 2D layered nickel …

Resistive switching (RS) devices are the best choice for nonvolatile memory storage and
neuromorphic computing applications due to their ease of fabrication, low power …

Ta-doped h-ZnTiO3 (h-ZnTiO3: Ta) films with an atomic ratio of 0–5% are grown on sapphire
substrates by pulsed laser deposition. The prepared films exhibit n-type semiconductor …