The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the
quality and reliability of ultrathin dielectrics to assume greater importance. This paper …

Low power consumption in the static and dynamic modes of operation is a key requirement
in the development of modern electronics. Tunnel field-effect transistors with direct band-to …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …

The microelectronics industry owes its considerable success largely to the existence of the
thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin …

We investigated the degradation of device reliability due to Negative Bias Temperature
Instability (NBTI) of PMOSFET with ultrathin gate oxide. It was experimentally demonstrated …

The present understanding of wear-out and breakdown in ultrathin (t/sub ox/< 5.0 nm)
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …

The properties of the so-called time dependent dielectric breakdown (TDDB) of silicon
dioxide-based gate dielectric for microelectronics technology have been investigated and …

Multilevel programing and charge transport characteristics of intrinsic SiO x-based resistive
switching memory are investigated using TaN/SiO x/n++ Si (MIS) and TiW/SiO x/TiW (MIM) …