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Double pinned perpendicular-magnetic-tunnel-junction spin-valve providing multi-level resistance states
A new design for high density integration greater than gigabits of perpendicular-magnetic-
tunnel-junction (p-MTJ) spin-valve, called the double pinned (ie, bottom and top pinned …
tunnel-junction (p-MTJ) spin-valve, called the double pinned (ie, bottom and top pinned …
Modeling methodology for thermal stability factor in spin transfer torque magneto-resistive random access memories
This article presents systematic pathways to model the thermal stability factor for magneto-
resistive random access memories using atomistic simulations. The model involves …
resistive random access memories using atomistic simulations. The model involves …
Magnetic-Field Orientation Dependence of Thermal Stability in Perpendicular STT-MRAM
Z Yan, P Lu, Y Chu, T Jiang, J Li… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
Under the influence of an external magnetic field, the macrospin model predicts that the free
layer of a magnetic tunnel junction (MTJ) exhibits a minimum energy barrier when the …
layer of a magnetic tunnel junction (MTJ) exhibits a minimum energy barrier when the …