A review is presented of work over the last 10 years which has been aimed at trying to
produce a Si‐based THz quantum cascade laser. Potential THz applications and present …

Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment
of high-power terahertz applications to semiconductors and low-dimensional semiconductor …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Recent experimental and theoretical results of impurity doped germanium and silicon
terahertz lasers are reviewed. Three different laser mechanisms exist in p-type germanium …

A terahertz phosphorus-doped silicon (Si: P) laser. A sharp emission is seen at~ 5.5 THz.
Such terahertz silicon lasers may eventually be used on telescopes such as the …

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining
increased attention these days. This paper reviews the recent advances in the search for a …

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced
electronic device performance, especially for semiconductor devices. Silicon-germanium …

We measured the non-radiative intersubband relaxation time in n-type modulation-doped
Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe …

Free-electron lasers based on radio-frequency linear accelerators provide an important
source of far-infrared radiation which allow exciting experiments that cannot be performed in …

The waveguide losses from a range of surface plasmon and double metal waveguides for
Ge/Si_1− xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 …